Low Temperature Growth of Boron Nitride Nanotubes on Substrates
Nano Letters2005Vol. 5(12), pp. 2528–2532
Citations Over TimeTop 10% of 2005 papers
Jie‐Sheng Wang, Vijaya Kayastha, Yoke Khin Yap, Zhiyong Fan, Jia Grace Lu, Zhengwei Pan, Ilia N. Ivanov, Alexander A. Puretzky, David B. Geohegan
Abstract
High growth temperatures (>1100 degrees C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 degrees C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.
Related Papers
- → Synthesis and characterization of boron-substituted carbons(2000)231 cited
- → Determination of Phase Stability of Elemental Boron(2015)42 cited
- → Determination of Phase Stability of Elemental Boron(2015)19 cited
- Review on Synthesis,Properties and Application of cBN Based Materials(2011)
- Study on boron forms and their relationship in rape cultivars with different boron efficiency(2002)