Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography
Nano Letters2006Vol. 6(3), pp. 351–354
Citations Over TimeTop 1% of 2006 papers
Gun Young Jung, Ezekiel Johnston‐Halperin, Wei Wu, Zhaoning Yu, Shih-Yuan Wang, William M. Tong, Zhiyong Li, Jonathan E. Green, Bonnie A. Sheriff, Akram Boukai, Yuri L. Bunimovich, James R. Heath, R. Stanley Williams
Abstract
High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm(2) was fabricated by two consecutive imprinting processes.
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