Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts
Nano Letters2006Vol. 6(12), pp. 2660–2666
Citations Over TimeTop 1% of 2006 papers
W. Weber, Lutz Geelhaar, Andrew Graham, E. Unger, Georg S. Duesberg, M. Liebau, W. Pamler, Caroline Chèze, Henning Riechert, Paolo Lugli, Franz Kreupl
Abstract
Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 10(7). The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 microm, and decreased exponentially for gate lengths exceeding 1 microm.
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