Enhancing the Electrical and Optoelectronic Performance of Nanobelt Devices by Molecular Surface Functionalization
Citations Over TimeTop 1% of 2007 papers
Abstract
By functionalizing the surfaces of ZnO nanobelts (NBs) with a thin self-assembled molecular layer, the electrical and optoelectronic performances of a single NB-based device are drastically improved. For a single NB-based device, due to energy band tuning and surface modification, the conductance was enhanced by 6 orders of magnitude upon functionalization; a coating molecule layer has changed a Schottky contact into an Ohmic contact without sophisticated deposition of multilayered metals. A functionalized NB showed negative differential resistance and exhibited huge improved photoconductivity and gas sensing response. The functionalized molecular layer also greatly reduced the etching rate of the ZnO NBs by buffer solution, largely extending their life time for biomedical applications. Our study demonstrates a new approach for improving the physical properties of oxide NBs and nanowires for device applications.
Related Papers
- → Photoconductivity effect in SnTe quantum well(2021)6 cited
- → The role of collisions in the aligned growth of vertical nanowires(2008)31 cited
- → Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs(2010)10 cited
- → Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC(2021)2 cited
- Absorption of light in InP nanowire arrays(2014)