Gate-Defined Quantum Dots in Intrinsic Silicon

Citations Over TimeTop 10% of 2007 papers

Abstract

We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) regime and the few-electron ( approximately 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.

Related Papers

• → Time-resolved detection of individual electrons in a quantum dot(2004)135 cited
• → InAs quantum dots coupled with strained InGaAs/GaAs coupled quantum-wells(2005)1 cited
• → Spatio-temporal fluctuations and disorder in quantum dot lasers(2004)
• Strain-induced Self-organized InAlAs Quntum-dot Material and Red-emitting Quantum-dot Laser(2002)
• Surface Gated Quantum Dots in Shallow GaAs-AlGaAs Heterostructures(1998)