Sub-10-nm Nanochannels by Self-Sealing and Self-Limiting Atomic Layer Deposition
Nano Letters2010Vol. 10(9), pp. 3324–3329
Citations Over TimeTop 10% of 2010 papers
Abstract
We report on a novel fabrication method of a nanochannel ionic field effect transistor (IFET) structure with sub-10-nm dimensions. A self-sealing and self-limiting atomic layer deposition (ALD) facilitates the fabrication of lateral type nanochannels smaller than the e-beam or optical lithographic limits. Using highly conformal ALD film structures, including TiO(2), TiO(2)/TiN, and Al(2)O(3)/Ru, we have fabricated lateral sub-10-nm nanochannels with good control over channel diameter. Nanochannels surrounded by core/shell (high-k dielectric/metal) layers give rise to all-around-gating IFETs, an important functional element in an electrofluidic-based circuit system.
Related Papers
- → TiCl[sub 4] as a Precursor in the TiN Deposition by ALD and PEALD(2005)77 cited
- → Kinetic modeling of film growth rates of TiN films in atomic layer deposition(2000)41 cited
- → Extremely Scaled (∼0.2 nm) Equivalent Oxide Thickness of Higher-k(k= 40) HfO2Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing(2012)7 cited
- → Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)(2006)4 cited
- → Extremely Scaled Equivalent Oxide Thickness of High-k (k=40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Ti Cap Anneal(2012)