Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
Nano Letters2010Vol. 10(8), pp. 3209–3215
Citations Over TimeTop 1% of 2010 papers
Li Song, Lijie Ci, Hao Lü, Павел Б. Сорокин, Chuanhong Jin, Jie Ni, Alexander G. Kvashnin, Dmitry G. Kvashnin, Jun Lou, Boris I. Yakobson, Pulickel M. Ajayan
Abstract
Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called "white graphene", has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoindentation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.
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