New Top-Down Approach for Fabricating High-Aspect-Ratio Complex Nanostructures with 10 nm Scale Features
Nano Letters2010Vol. 10(9), pp. 3604–3610
Citations Over TimeTop 10% of 2010 papers
Abstract
We describe a new patterning technique, named "secondary sputtering lithography" that enables fabrication of ultrahigh-resolution (ca. 10 nm) and high aspect ratio (ca. 15) patterns of three-dimensional various shapes. In this methodology, target materials are etched and deposited onto the side surface of a prepatterned polymer by using low Ar ion bombarding energies, based on the angular distribution of target particles by ion-beam bombardment. After removal of the prepatterned polymer, high aspect ratios and high-resolution patterns of target materials are created.
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