Defects in Individual Semiconducting Single Wall Carbon Nanotubes: Raman Spectroscopic and in Situ Raman Spectroelectrochemical Study

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Abstract

Raman spectroscopy and in situ Raman spectroelectrochemistry have been used to study the influence of defects on the Raman spectra of semiconducting individual single-walled carbon nanotubes (SWCNTs). The defects were created intentionally on part of an originally defect-free individual semiconducting nanotube, which allowed us to analyze how defects influence this particular nanotube. The formation of defects was followed by Raman spectroscopy that showed D band intensity coming from the defective part and no D band intensity coming from the original part of the same nanotube. It is shown that the presence of defects also reduces the intensity of the symmetry-allowed Raman features. Furthermore, the changes to the Raman resonance window upon the introduction of defects are analyzed. It is demonstrated that defects lead to both a broadening of the Raman resonance profile and a decrease in the maximum intensity of the resonance profile. The in situ Raman spectroelectrochemical data show a doping dependence of the Raman features taken from the defective part of the tested SWCNT.

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