Electronic Junction Control in a Nanotube-Semiconductor Schottky Junction Solar Cell
Nano Letters2010Vol. 10(12), pp. 5001–5005
Citations Over TimeTop 10% of 2010 papers
Abstract
We exploit the low density of electronic states in single wall carbon nanotubes to demonstrate active, electronic modulation of their Fermi level offset relative to n-type silicon in a nanotube-Si (metal-semiconductor) Schottky junction solar cell. Electronic modulation of the Fermi level offset, the junction interface dipole and a field developed across the depletion layer modifies the built-in potential in the device and its power generation characteristics. As produced (before modulation) devices exhibit ∼8.5% power conversion efficiency (PCE). With active modulation the PCE is continuously and reversibly changed from 4 to 11%.
Related Papers
- → Back‐to‐back connected asymmetric Schottky diodes with series resistance as a single diode(2015)50 cited
- → Rectified Schottky diodes based on PEDOT:PSS/InGaZnO junctions(2017)20 cited
- → Rectified Schottky diodes that use low-cost carbon paste/InGaZnO junctions(2019)10 cited
- → Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)(2013)8 cited
- → ZnO Surface Properties and Schottky Contacts(2011)3 cited