Vertically Aligned Cadmium Chalcogenide Nanowire Arrays on Muscovite Mica: A Demonstration of Epitaxial Growth Strategy
Citations Over TimeTop 10% of 2010 papers
Abstract
We report a strategy for achieving epitaxial, vertically aligned cadmium chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van der Waals epitaxy with (001) muscovite mica substrate. The nanowires, grown from a vapor transport process, exhibited diameter uniformity throughout their length, sharp interface to the substrate, and positive correlation between diameter and length with preferential growth direction of [0001] for the monocrystalline wurtzite CdS and CdSe nanowires, but of [111] for zinc blende CdTe nanowires, which also featured abundant twinning boundaries. Self-catalytic vapor-liquid-solid mechanism with hydrogen-assisted thermal evaporation is proposed to intepret the observations. Optical absorption from the as-grown CdSe nanowire arrays on mica at 10 K revealed intense first-order exciton absorption and its longitudinal optical phonon replica. A small Stokes shift (∼1.3 meV) was identified, suggesting the high quality of the nanowires. This study demonstrated the generality of van der Waals epitaxy for the growth of nanowire arrays and their potential applications in optical and energy related devices.
Related Papers
- → First principles study of wurtzite and zinc blende GaN: a comparison of the electronic and optical properties(2005)35 cited
- → Wurtzite AlGaAs Nanowires(2020)23 cited
- → Wurtzite/Zinc-Blende ‘K’-shape InAs Nanowires with Embedded Two-Dimensional Wurtzite Plates(2016)13 cited
- → Electronic and structural properties of wurtzite III-V and II-VI structures(2014)