Graphene Epitaxy by Chemical Vapor Deposition on SiC

Citations Over TimeTop 1% of 2011 papers

Abstract

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) and enables the controlled synthesis of a determined number of graphene layers with a defined doping level. The high quality of graphene is evidenced by a unique combination of angle-resolved photoemission spectroscopy, Raman spectroscopy, transport measurements, scanning tunneling microscopy and ellipsometry. Our measurements indicate that CVD grown graphene is under less compressive strain than its epitaxial counterpart and confirms the existence of an electronic energy band gap. These features are essential for future applications of graphene electronics based on wafer scale graphene growth.

Related Papers

• → The electrical, optical properties of CdTe polycrystalline thin films deposited under Ar–O2 mixture atmosphere by close-spaced sublimation(2005)30 cited
• → Sublimation Behavior of Actinoid Chelates of 2,2,6,6-Tetramethyl-3,5-heptanedione(1982)2 cited
• → Explosive material qualification chemistry sublimation studies of hexanitroazobenzene (HNAB)(1970)
• → Sublimation of a crystal slowed by sorption of foreign molecules from a gaseous medium(2014)
• → Influence of Surface Preparation on the Formation of Surface Pits by Dezincification of Al–11%Zn Alloys(1975)