Intrinsic Mechanisms of Memristive Switching
Nano Letters2011Vol. 11(5), pp. 2114–2118
Citations Over TimeTop 1% of 2011 papers
Kazuki Nagashima, Takeshi Yanagida, Keisuke Oka, Masaki Kanai, Annop Klamchuen, Jin‐Soo Kim, Bae Ho Park, Tomoji Kawai
Abstract
Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating phenomenon toward next-generation universal nonvolatile memories. However the lack of understanding the electrical nature of RS has held back the applications. Here we demonstrate the electrical nature of bipolar RS in cobalt oxides, such as the conduction mechanism and the switching location, by utilizing a planar single oxide nanowire device. Experiments utilizing field effect devices and multiprobe measurements have shown that the nanoscale RS in cobalt oxides originates from redox events near the cathode with p-type conduction paths, which is in contrast with the prevailing oxygen vacancy based model.
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