Gate-Activated Photoresponse in a Graphene p–n Junction
Nano Letters2011Vol. 11(10), pp. 4134–4137
Citations Over TimeTop 1% of 2011 papers
Max C. Lemme, Frank H. L. Koppens, Abram L. Falk, Mark S. Rudner, Hongkun Park, Leonid Levitov, C. M. Marcus
Abstract
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.
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