Plasmonic Green Nanolaser Based on a Metal–Oxide–Semiconductor Structure
Citations Over TimeTop 10% of 2011 papers
Abstract
Realization of smaller and faster coherent light sources is critically important for the emerging applications in nanophotonics and information technology. Semiconductor lasers are arguably the most suitable candidate for such purposes. However, the minimum size of conventional semiconductor lasers utilizing dielectric optical cavities for sustaining laser oscillation is ultimately governed by the diffraction limit (∼(λ/2n)(3) for three-dimensional (3D) cavities, where λ is the free-space wavelength and n is the refractive index). Here, we demonstrate the 3D subdiffraction-limited laser operation in the green spectral region based on a metal-oxide-semiconductor (MOS) structure, comprising a bundle of green-emitting InGaN/GaN nanorods strongly coupled to a gold plate through a SiO(2) dielectric nanogap layer. In this plasmonic nanocavity structure, the analogue of MOS-type "nanocapacitor" in nanoelectronics leads to the confinement of the plasmonic field into a 3D mode volume of 8.0 × 10(-4) μm(3) (∼0.14(λ/2n)(3)).
Related Papers
- → Ordered, uniform-sized ZnO nanolaser arrays(2007)134 cited
- → Large-Scale Statistics for Threshold Optimization of Optically Pumped Nanowire Lasers(2017)38 cited
- → Plasmonic nanolaser based on a single oligomer(2022)
- → A Novel and Convenient Experimental Verification of Lasing in High-β Lasers(2023)
- → Study of the pump dependence of the emission properties of a plasmonic array nanolaser(2023)