Doping Monolayer Graphene with Single Atom Substitutions
Nano Letters2011Vol. 12(1), pp. 141–144
Citations Over TimeTop 1% of 2011 papers
Hongtao Wang, Qingxiao Wang, Yingchun Cheng, Kun Li, Yingbang Yao, Qiang Zhang, Cezhou Dong, Peng Wang, Udo Schwingenschlögl, Wei Yang, Xixiang Zhang
Abstract
Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.
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