Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes
Nano Letters2012Vol. 12(3), pp. 1235–1240
Citations Over TimeTop 10% of 2012 papers
Woon Ik Park, Jong Moon Yoon, Moonkyu Park, Jinsup Lee, Sung Kyu Kim, Jae Won Jeong, Kyung-Ho Kim, Hu Young Jeong, Seokwoo Jeon, Kwang Soo No, Jeong Yong Lee, Yeon Sik Jung
Abstract
We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.
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