Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)
Nano Letters2012Vol. 12(3), pp. 1498–1502
Citations Over TimeTop 10% of 2012 papers
T. Maassen, J. J. van den Berg, Natasja IJbema, Felix Fromm, Thomas Seyller, Rositza Yakimova, B. J. van Wees
Abstract
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is probably related to the changed substrate, while the cause for the small value of D(S) remains an open question.
Related Papers
- → Monolayer Behavior of Cyclic and Linear Forms of Surfactins: Thermodynamic Analysis of Langmuir Monolayers and AFM Study of Langmuir-Blodgett Monolayers(2014)13 cited
- → Stabilization of Langmuir monolayer of hydrophobic thiocholesterol molecules(2008)8 cited
- → Direct observation of defect-diminished fatty acid monolayers and their optical applications(1996)12 cited
- → On The Properties Of Surfactant Monolayers At Low Surface Tensions(2009)
- Metal-incorporated Langmuir Monolayers and Langmuir-Blodgett Films(2004)