InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays
Citations Over TimeTop 1% of 2012 papers
Abstract
Uniform GaN nanorod arrays are grown vertically by selective area growth on (left angle bracket 0001 right angle bracket) substrates. The GaN nanorods present six nonpolar {1⁻100} facets, which serve as growth surfaces for InGaN-based light-emitting diode quantum well active regions. Compared to growth on the polar {0001} plane, the piezoelectric fields in the multiple quantum wells (MQWs) can be eliminated when they are grown on nonpolar planes. The capability of growing ordered GaN nanorod arrays with different rod densities is demonstrated. Light emission from InGaN/GaN MQWs grown on the nonpolar facets is investigated by photoluminescence. Local emission from MQWs grown on different regions of GaN nanorods is studied by cathodoluminescence (CL). The core-shell structure of MQWs grown on GaN nanorods is investigated by cross-sectional transmission electron microscopy in both axial and radial directions. The results show that the active MQWs are predominantly grown on nonpolar planes of GaN nanorods, consistent with the observations from CL. The results suggest that GaN nanorod arrays are suitable growth templates for efficient light-emitting diodes.
Related Papers
- → Gallium nitride (GaN) HEMT's: progress and potential for commercial applications(2003)38 cited
- → Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence(1998)46 cited
- → The evaluation and application of wide bandgap power devices(2014)13 cited
- → Periodically Oriented Gallium Nitride: Materials Development(2014)
- → Advanced packaging for wide band gap power semiconductors(2017)