High-Performance Flexible Thin-Film Transistors Exfoliated from Bulk Wafer
Citations Over TimeTop 10% of 2012 papers
Abstract
Mechanically flexible integrated circuits (ICs) have gained increasing attention in recent years with emerging markets in portable electronics. Although a number of thin-film-transistor (TFT) IC solutions have been reported, challenges still remain for the fabrication of inexpensive, high-performance flexible devices. We report a simple and straightforward solution: mechanically exfoliating a thin Si film containing ICs. Transistors and circuits can be prefabricated on bulk silicon wafer with the conventional complementary metal-oxide-semiconductor (CMOS) process flow without additional temperature or process limitations. The short channel MOSFETs exhibit similar electrical performance before and after exfoliation. This exfoliation process also provides a fast and economical approach to producing thinned silicon wafers, which is a key enabler for three-dimensional (3D) silicon integration based on Through Silicon Vias (TSVs).
Related Papers
- → Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C(2010)94 cited
- → Minimum Silicon Wafer Thickness for ID Wafering(1982)8 cited
- → Future a-Si TFT Fabrication Technologies for Large-size and High Pixel Density AM LCDs.(1993)1 cited
- 대면적 TFT-LCD를 위한 다결정 실리콘 박막 트랜지스터 ( The Poly-Si Thin Film Transistor for Large-area TFT-LCD )(1999)
- Influence Hydrogen on Electrical Properties of Zinc Tin Oxide (ZTO) Thin-Film Transistor(2015)