A Graphene-Based Hot Electron Transistor
Nano Letters2013Vol. 13(4), pp. 1435–1439
Citations Over TimeTop 1% of 2013 papers
Sam Vaziri, Grzegorz Łupina, Christoph Henkel, Anderson D. Smith, Mikael Östling, J. Da̧browski, G. Lippert, Wolfgang Mehr, Max C. Lemme
Abstract
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 10(4).
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