Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning
Nano Letters2013Vol. 13(9), pp. 4113–4117
Citations Over TimeTop 1% of 2013 papers
Yingchao Cui, Jia Wang, Sébastien Plissard, Alessandro Cavalli, T.T. Vu, René van Veldhoven, Lu Gao, Mike Trainor, Marcel A. Verheijen, J. E. M. Haverkort, Erik P. A. M. Bakkers
Abstract
We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p-n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 10(7) is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm(2), and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.
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