Nature of the Metal Insulator Transition in Ultrathin Epitaxial Vanadium Dioxide
Citations Over TimeTop 10% of 2013 papers
Abstract
We have combined hard X-ray photoelectron spectroscopy with angular dependent O K-edge and V L-edge X-ray absorption spectroscopy to study the electronic structure of metallic and insulating end point phases in 4.1 nm thick (14 units cells along the c-axis of VO2) films on TiO2(001) substrates, each displaying an abrupt MIT centered at ~300 K with width 10(3). The dimensions, quality of the films, and stoichiometry were confirmed by a combination of scanning transmission electron microscopy with electron energy loss spectroscopy, X-ray spectroscopy, and resistivity measurements. The measured end point phases agree with their bulk counterparts. This clearly shows that, apart from the strain induced change in transition temperature, the underlying mechanism of the MIT for technologically relevant dimensions must be the same as the bulk for this orientation.
Related Papers
- → Atomic-Resolution Electron Energy Loss Spectroscopy Imaging in Aberration Corrected Scanning Transmission Electron Microscopy(2003)105 cited
- → Electron energy loss spectroscopy of LiH with a scanning transmission electron microscope(1987)7 cited
- → Elemental electron energy loss mapping of a precipitate in a multi-component aluminium alloy(2016)6 cited
- Application of high-resolution electron energy-loss spectroscopy in materials science(2010)
- → Some applications of analytical electron microscopy and high‐resolution spectroscopy in the study of functional materials(2016)