Addressing Single Nitrogen-Vacancy Centers in Diamond with Transparent in-Plane Gate Structures
Nano Letters2014Vol. 14(5), pp. 2359–2364
Citations Over TimeTop 12% of 2014 papers
Moritz V. Hauf, Patrick Simon, Nabeel Aslam, Matthias Pfender, Philipp Neumann, Sébastien Pezzagna, Jan Meijer, Jörg Wrachtrup, M. Stutzmann, Friedemann Reinhard, José A. Garrido
Abstract
For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV(-) across NV(0) to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.
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