Influence of Excited Carriers on the Optical and Electronic Properties of MoS2
Nano Letters2014Vol. 14(7), pp. 3743–3748
Citations Over TimeTop 10% of 2014 papers
Abstract
We study the ground-state and finite-density optical response of molybdenum disulfide by solving the semiconductor Bloch equations, using ab initio band structures and Coulomb interaction matrix elements. Spectra for excited carrier densities up to 10(13) cm(-2) reveal a redshift of the excitonic ground-state absorption, whereas higher excitonic lines are found to disappear successively due to Coulomb-induced band gap shrinkage of more than 500 meV and binding-energy reduction. Strain-induced band variations lead to a redshift of the lowest exciton line by ∼110 meV/% and change the direct transition to indirect while maintaining the magnitude of the optical response.
Related Papers
- → Clarification of the relative magnitude of exciton binding energies in ZnO and SnO2(2022)19 cited
- → Channels of the exciton–exciton annihilation in one-dimensional aggregates at low temperature(2000)14 cited
- → High-z Sudoku: a diagnostic tool for identifying robust (sub)mm redshifts(2022)10 cited
- → High-z Sudoku: A diagnostic tool for identifying robust (sub)mm redshifts(2022)1 cited
- → Exciton Binding Energies in Cd0.11Zn0.89S/Mg0.22Zn0.78S Quantum Wells Lattice-Matched to GaP Substrates(2009)