The Chemistry of Imperfections in N-Graphene

Citations Over TimeTop 10% of 2014 papers

Abstract

Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material still remains an enigma. Here we demonstrate a method to handle N-impurities in graphene, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration. By applying photoemission spectroscopy and density functional calculations, we show that the electron doping effect of graphitic N is strongly suppressed by pyridinic N. As the latter is converted into the graphitic configuration, the efficiency of doping rises up to half of electron charge per N atom.

Related Papers

• → Simulations of Morphology and Charge Transport in Supramolecular Organic Materials(2014)8 cited
• → Comparison of Heterogeneously and Homogeneously Doped Polyphenylacetylene Using IR and XPS(1991)8 cited
• → Anomalous charge carrier transport phenomena in highly aluminum doped SiC(2006)5 cited
• → Electric charge and potential distribution in twisted multilayer graphene(2013)
• → DETERMINING QUALITY REQUIREMENTS AT THE UNIVERSITIES TO IMPROVE THE QUALITY OF EDUCATION(2018)