Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Nano Letters2014Vol. 14(9), pp. 5206–5211
Citations Over TimeTop 1% of 2014 papers
Qian Gao, Dhruv Saxena, Fan Wang, Lan Fu, Sudha Mokkapati, Yanan Guo, Li Li, J. Wong‐Leung, Philippe Caroff, Hark Hoe Tan, C. Jagadish
Abstract
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
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