Tunable Transport Gap in Phosphorene

Citations Over TimeTop 1% of 2014 papers

Abstract

In this article, we experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ∼0.3 to ∼1.0 eV when the flake thickness is scaled down from bulk to a single layer. As a consequence, the ON current, the OFF current, and the current ON/OFF ratios of phosphorene field effect transistors (FETs) were found to be significantly impacted by the layer thickness. The transport gap was determined from the transfer characteristics of phosphorene FETs using a robust technique that has not been reported before. The detailed mathematical model is also provided. By scaling the thickness of the gate oxide, we were also able to demonstrate enhanced ambipolar conduction in monolayer and few layer phosphorene FETs. The asymmetry of the electron and the hole current was found to be dependent on the layer thickness that can be explained by dynamic changes of the metal Fermi level with the energy band of phosphorene depending on the layer number. We also extracted the Schottky barrier heights for both the electron and the hole injection as a function of the layer thickness. Finally, we discuss the dependence of field effect hole mobility of phosphorene on temperature and carrier concentration.

Related Papers

• → High ambipolar and balanced carrier mobility in regioregular poly(3-hexylthiophene)(2004)222 cited
• → Two-Dimensional PC₆ with Direct Band Gap and Anisotropic Carrier Mobility(2019)174 cited
• → Light emitting ambipolar field-effect transistors of 2,5-bis(4-biphenyl)bithiophene single crystals with anisotropic carrier mobilities(2009)23 cited
• → Tuning the charge transport properties of dicyanodistyrylbenzene derivatives by the number of fluorine substituents(2016)7 cited
• → A New Two-Dimensional Functional Material with Desirable Bandgap and Ultrahigh Carrier Mobility(2018)1 cited