Sub-10 nm Nanoimprint Lithography by Wafer Bowing
Nano Letters2008Vol. 8(11), pp. 3865–3869
Citations Over TimeTop 10% of 2008 papers
Wei Wu, William M. Tong, Jonathan Bartman, Yufeng Chen, R.G. Walmsley, Zhaoning Yu, Qiangfei Xia, Inkyu Park, Carl Picciotto, Jun Gao, Shih-Yuan Wang, Deborah Morecroft, Joel K. W. Yang, Karl K. Berggren, R. Stanley Williams
Abstract
We introduce the concept of wafer bowing to affect nanoimprinting. This approach allows a design that can fit the key imprinting mechanism into a compact module, which we have constructed and demonstrated with an overlay and resolution of <0.5 microm and <10 nm, respectively. In the short term, this wafer bowing approach makes nanoimprint lithography much more accessible to a broad range of researchers. More importantly, this approach eliminates machine movement other than wafer bowing and shortens the mechanical path; these will enable the achievement of excellent patterning and overlay at a much lower cost. In the long term, wafer bowing is extensible to step-and-repeat printing for volume manufacturing.
Related Papers
- → Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography(2021)29 cited
- → Fabrication of high aspect ratio subwavelength gratings based on X-ray lithography and electron beam lithography(2012)23 cited
- → Fabrication of a three-dimensional nanoimprint mold by using electron beam lithography with consideration of the proximity effect(2008)6 cited
- → Fabrication of spiral zone plate using hybrid electron beam and x-ray lithography(2016)
- → Study of SiO2Thin Film Patterning by Low Energy Electron Beam Lithography Using Microcolumns(2007)