Synthesis and Strain Relaxation of Ge-Core/Si-Shell Nanowire Arrays
Nano Letters2008Vol. 8(11), pp. 4081–4086
Citations Over TimeTop 10% of 2008 papers
Abstract
Analogous to planar heteroepitaxy, misfit dislocation formation and stress-driven surface roughening can relax coherency strains in misfitting core-shell nanowires. The effects of coaxial dimensions on strain relaxation in aligned arrays of Ge-core/Si-shell nanowires are analyzed quantitatively by transmission electron microscopy and synchrotron X-ray diffraction. Relating these results to reported continuum elasticity models for coaxial nanowire heterostructures provides valuable insights into the observed interplay of roughening and dislocation-mediated strain relaxation.
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