0 citations
GaAs Core−Shell Nanowires for Photovoltaic Applications
Nano Letters2009Vol. 9(1), pp. 148–154
Citations Over TimeTop 1% of 2009 papers
Abstract
We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.
Related Papers
- → Screening beneficial dopants to Cu interconnects by modeling(2002)10 cited
- → Investigation of Spin-on Dopants and Curing Temperature Effect on Dopant Activation(2019)3 cited
- → Gaseous dopant sources in MOMBE/CBE(1990)57 cited
- → Relationship between Flexoelectricity and Helical Pitch in Ferroelectric Liquid Crystal Mixtures Containing Host Achiral Compounds and Chiral Dopants(1999)3 cited
- → Analysis of Dopant Distributions in LEC‐InP(1995)3 cited