Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation
Nano Letters2009Vol. 9(4), pp. 1341–1344
Citations Over TimeTop 10% of 2009 papers
Samuel Hoffmann, Jan Bauer, Carsten Ronning, Th. Stelzner, Johann Michler, Christophe Ballif, Владимир Сиваков, Silke Christiansen
Abstract
The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current-voltage measurements. By varying the implantation parameters in several process steps, uniform p- and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective doping is demonstrated by electron beam-induced current imaging on single nanowires, and current-voltage measurements show their well-defined rectifying behavior.
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