Charge Transport in Interpenetrating Networks of Semiconducting and Metallic Carbon Nanotubes
Nano Letters2009Vol. 9(5), pp. 1866–1871
Citations Over TimeTop 10% of 2009 papers
M. A. Topinka, Michael W. Rowell, David Goldhaber‐Gordon, Michael D. McGehee, David S. Hecht, G. Grüner
Abstract
Carbon nanotube network field effect transistors (CNTN-FETs) are promising candidates for low cost macroelectronics. We investigate the microscopic transport in these devices using electric force microscopy and simulations. We find that in many CNTN-FETs the voltage drops abruptly at a point in the channel where the current is constricted to just one tube. We also model the effect of varying the semiconducting/metallic tube ratio. The effect of Schottky barriers on both conductance within semiconducting tubes and conductance between semiconducting and metallic tubes results in three possible types of CNTN-FETs with fundamentally different gating mechanisms. We describe this with an electronic phase diagram.
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