Ionic Field Effect Transistors with Sub-10 nm Multiple Nanopores
Nano Letters2009Vol. 9(5), pp. 2044–2048
Citations Over TimeTop 1% of 2009 papers
Abstract
We report a new method to fabricate electrode-embedded multiple nanopore structures with sub-10 nm diameter, which is designed for electrofluidic applications such as ionic field effect transistors. Our method involves patterning pore structures on membranes using e-beam lithography and shrinking the pore diameter by a self-limiting atomic layer deposition process. We demonstrate that 70-80 nm diameter pores can be shrunk down to sub-10 nm diameter and that the ionic transport of KCl electrolyte can be efficiently manipulated by the embedded electrode within the membrane.
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