Sub-20 nm Si/Ge Superlattice Nanowires by Metal-Assisted Etching
Nano Letters2009Vol. 9(9), pp. 3106–3110
Citations Over TimeTop 10% of 2009 papers
Nadine Geyer, Zhipeng Huang, Bodo Fuhrmann, Silko Grimm, Manfred Reiche, Nguyen Duc Trung Kien, Johannes de Boor, Hartmut S. Leipner, P. Werner, U. Gösele
Abstract
An effective and low-cost method to fabricate hexagonally patterned, vertically aligned Si/Ge superlattice nanowires with diameters below 20 nm is presented. By combining the growth of Si/Ge superlattices by molecular beam epitaxy, prepatterning the substrate by anodic aluminum oxide masks, and finally metal-assisted chemical wet etching, this method generates highly ordered hexagonally patterned nanowires. This technique allows the fabrication of nanowires with a high area density of 10(10) wires/cm(2), including the control of their diameter and length.
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