Biaxial Strain in Graphene Adhered to Shallow Depressions
Nano Letters2009Vol. 10(1), pp. 6–10
Citations Over TimeTop 10% of 2009 papers
Constanze Metzger, Sebastian Rémi, Mengkun Liu, Silvia Viola Kusminskiy, A. H. Castro Neto, Anna K. Swan, Bennett B. Goldberg
Abstract
Measurements on graphene exfoliated over a substrate prepatterned with shallow depressions demonstrate that graphene does not remain free-standing but instead adheres to the substrate despite the induced biaxial strain. The strain is homogeneous over the depression bottom as determined by Raman measurements. We find higher Raman shifts and Grüneisen parameters of the phonons underlying the G and 2D bands under biaxial strain than previously reported. Interference modeling is used to determine the vertical position of the graphene and to calculate the optimum dielectric substrate stack for maximum Raman signal.
Related Papers
- → Raman spectrum of graphene with its versatile future perspectives(2016)157 cited
- → Stress, strain and Raman shifts(2018)137 cited
- → Electromagnetic interference shielding of segregated polymer composite with an ultralow loading ofin situthermally reduced graphene oxide(2014)135 cited
- → Raman nanometrology of graphene: Temperature and substrate effects(2009)129 cited
- Raman spectroscopy of exfoliated graphene sheets and chemically-modified graphene samples(2012)