Inhibiting Strain-Induced Surface Roughening: Dislocation-Free Ge/Si and Ge/SiGe Core−Shell Nanowires
Nano Letters2009Vol. 9(11), pp. 3715–3719
Citations Over TimeTop 10% of 2009 papers
Abstract
Elastic strain is a critical factor in engineering the electronic behavior of core-shell semiconductor nanowires and provides the driving force for undesirable surface roughening and defect formation. We demonstrate two independent strategies, chlorine surface passivation and growth of nanowires with low-energy sidewall facets, to avoid strain-induced surface roughening that promotes dislocation nucleation in group IV core-shell nanowires. Metastably strained, dislocation-free, core-shell nanowires are obtained, and axial strains are measured and compared to elasticity model predictions.
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