Colloidal PbS Quantum Dot Solar Cells with High Fill Factor
Citations Over TimeTop 1% of 2010 papers
Abstract
We fabricate PbS colloidal quantum dot (QD)-based solar cells using a fullerene derivative as the electron-transporting layer (ETL). A thiol treatment and oxidation process are used to modify the morphology and electronic structure of the QD films, resulting in devices that exhibit a fill factor (FF) as high as 62%. We also show that, for QDs with a band gap of less than 1 eV, an open-circuit voltage (VOC) of 0.47 V can be achieved. The power conversion efficiency reaches 1.3% under 1 sun AM1.5 test conditions and 2.4% under monochromatic infrared (lambda=1310 nm) illumination. A consistent mechanism for device operation is developed through a circuit model and experimental measurements, shedding light on new approaches for optimization of solar cell performance by modifying the interface between the QDs and the neighboring charge transport layers.
Related Papers
- → Intrinsic open-circuit voltage and short-circuit current of ferroelectric photovoltaic effect(2020)3 cited
- → A superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration(2013)2 cited
- → Minimization of Open Circuit Voltage Fluctuation of Quantum Dot Based Solar Cell Using InN(2013)1 cited
- → Application of InN Based Quantum Dot in Reducing Short Circuit Current Variation of Solar Cell above Room Temperature(2013)
- Detailed Analysis of Electrical Characteristics of an InGaP/lnGaAs/Ge Triple-junction Solar Cell(2013)