Large Energy Pulse Generation Modulated by Graphene Epitaxially Grown on Silicon Carbide
ACS Nano2010Vol. 4(12), pp. 7582–7586
Citations Over TimeTop 10% of 2010 papers
Haohai Yu, Xiufang Chen, Huaijin Zhang, Xiangang Xu, Xiaobo Hu, Zhengping Wang, Jiyang Wang, Shidong Zhuang, Minhua Jiang
Abstract
Graphene grown by thermal decomposition of a two-inch 6H silicon carbide (SiC) wafers surface was used to modulate a large energy pulse laser. Because of its saturable absorbing properties, graphene was used as a passive Q-switcher, and because of its high refractive index the SiC substrate was used as an output coupler. Together they formed a setup where the passively Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal laser was realized with the pulse energy of 159.2 nJ. Our results illustrate the feasibility of using graphene as an inexpensive Q-switcher for solid-state lasers and its promising applications in integrated optics.
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