Atomic-Scale Investigation of Graphene Grown on Cu Foil and the Effects of Thermal Annealing

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Abstract

We have investigated the effects of thermal annealing on ex-situ chemically vapor deposited submonolayer graphene islands on polycrystalline Cu foil at the atomic-scale using ultrahigh vacuum scanning tunneling microscopy. Low-temperature annealed graphene islands on Cu foil (at ∼430 °C) exhibit predominantly striped Moiré patterns, indicating a relatively weak interaction between graphene and the underlying polycrystalline Cu foil. Rapid high-temperature annealing of the sample (at 700-800 °C) gives rise to the removal of Cu oxide and the recovery of crystallographic features of the copper that surrounds the intact graphene. These experimental observations of continuous crystalline features between the underlying copper (beneath the graphene islands) and the surrounding exposed copper areas revealed by high-temperature annealing demonstrates the impenetrable nature of graphene and its potential application as a protective layer against corrosion.

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