Toward the Controlled Synthesis of Hexagonal Boron Nitride Films
ACS Nano2012Vol. 6(7), pp. 6378–6385
Citations Over TimeTop 10% of 2012 papers
Ariel Ismach, Harry Chou, D. Ferrer, Yaping Wu, Stephen McDonnell, Herman Carlo Floresca, Alan Covacevich, Cody W. Pope, Richard D. Piner, Moon J. Kim, Robert M. Wallace, Luigi Colombo, Rodney S. Ruoff
Abstract
Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.
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