Transparent and Flexible Graphene Charge-Trap Memory
ACS Nano2012Vol. 6(9), pp. 7879–7884
Citations Over TimeTop 10% of 2012 papers
Sung Min Kim, Emil B. Song, Sejoon Lee, Jinfeng Zhu, David H. Seo, Matthew Mecklenburg, Sunae Seo, Kang L. Wang
Abstract
A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (~110 °C). The GCTM exhibits memory functionality of ~8.6 V memory window and 30% data retention per 10 years, while maintaining ~80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex.
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