Large-Area Bernal-Stacked Bi-, Tri-, and Tetralayer Graphene
Citations Over TimeTop 10% of 2012 papers
Abstract
Few-layer graphene, with Bernal stacking order, is of particular interest to the graphene community because of its unique tunable electronic structure. A synthetic method to produce such large area graphene films with precise thickness from 2 to 4 layers would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform Bernal-stacked bi-, tri-, and tetralayer graphene films were successfully synthesized on a Cu surface in selective growth windows, with a finely tuned total pressure and CH(4)/H(2) gas ratio. On the basis of the analyses obtained, the growth mechanism is not an independent homoexpitaxial layer-by-layer growth, but most likely a simultaneous-seeding and self-limiting process.
Related Papers
- → Orthotropic friction at the edges and interior of graphene and graphene fluoride and frictional anisotropy of graphene at the nanoscale(2021)1 cited
- → Survey of possible layer stacking structures*(1967)25 cited
- A natural advantage? Using mined graphite to make graphene(2013)
- Synthesis and Characterisation of Graphene Single Sheets(2012)
- Unique synthesis of graphene-based materials for clean energy and biological sensing applications(2012)