Band Gap Engineering of Chemical Vapor Deposited Graphene byin SituBN Doping

Citations Over TimeTop 10% of 2012 papers

Abstract

Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.

Related Papers

• → Direct observations of the MOF (UiO-66) structure by transmission electron microscopy(2013)74 cited
• → A novel and simple one-step solid-state reaction for the synthesis of PbS nanoparticles in the presence of a suitable surfactant(2001)39 cited
• → TEM and HRTEM characterization of metallized nanotubules derived from bacteria(1993)10 cited
• FACILE SYNTHESIS AND CHARACTERIZATION OF FLOWER-LIKE MoS2 MICROSPHERES(2014)
• → Atomic arrangements of (Ga1−xMnx)N nanorods grown on Al2O3 substrates(2008)3 cited