Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments
ACS Nano2014Vol. 8(6), pp. 6265–6272
Citations Over TimeTop 1% of 2014 papers
Stephen McDonnell, Angelica Azcatl, Rafik Addou, Cheng Gong, Corsin Battaglia, Steven S.C. Chuang, Kyeongjae Cho, Ali Javey, Robert M. Wallace
Abstract
MoOx shows promising potential as an efficient hole injection layer for p-FETs based on transition metal dichalcogenides. A combination of experiment and theory is used to study the surface and interfacial chemistry, as well as the band alignments for MoOx/MoS2 and MoOx/WSe2 heterostructures, using photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory. A Mo(5+) rich interface region is identified and is proposed to explain the similar low hole Schottky barriers reported in a recent device study utilizing MoOx contacts on MoS2 and WSe2.
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