In Situ Fabrication of Highly Conductive Metal Nanowire Networks with High Transmittance from Deep-Ultraviolet to Near-Infrared

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Abstract

We have developed a facile and compatible method to in situ fabricate uniform metal nanowire networks on substrates. The as-fabricated metal nanowire networks show low sheet resistance and high transmittance (2.2 Ω sq(-1) at T = 91.1%), which is equivalent to that of the state-of-the-art metal nanowire networks. We demonstrated that the transmittance of the metal networks becomes homogeneous from deep-ultraviolet (200 nm) to near-infrared (2000 nm) when the size of the wire spacing increases to micrometer size. Theoretical and experimental analyses indicated that we can improve the conductivity of the metal networks as well as keep their transmittance by increasing the thickness of the metal films. We also carried out durability tests to demonstrate our as-fabricated metal networks having good flexibility and strong adhesion.

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