Current crowding mediated large contact noise in graphene field-effect transistors

Citations Over TimeTop 10% of 2016 papers

Abstract

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V-1 s-1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two-dimensional material-based electronic devices.

Related Papers

• → Field effects of current crowding in metal-MoS2 contacts(2016)26 cited
• → A contact resistance measurement setup for the study of novel contacts(2017)11 cited
• → A facility for electrical contact resistance measurement(1998)7 cited
• → Characterisation of electrical contacts made by non-conductive adhesive(2002)11 cited
• → Improving Electric Contacts to Two-Dimensional Semiconductors(2021)