Tailoring spin defects in diamond by lattice charging
Citations Over TimeTop 10% of 2017 papers
Abstract
Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique is the significant residual lattice damage, which degrades the performance of spins in quantum applications. Here we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. Charging of vacancies at, for example, nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in tenfold-improved spin coherence times and twofold-improved formation yield of nitrogen-vacancy centres in diamond. This is achieved by confining implantation defects into the space-charge layer of free carriers generated by a boron-doped diamond structure. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. These results could improve engineering of quantum devices using solid-state systems.
Related Papers
- → Infinite coherence time of edge spins in finite-length chains(2018)14 cited
- → Realistic Free-Spins Features Increase Preference for Slot Machines(2016)13 cited
- → Addition of an arbitrary number of different spins(1980)2 cited
- → Observation of two creation processes for light-induced paramagnetic spins in a-Si1−χOχ:H alloys(1996)1 cited
- THE STOCHASTIC TREATMENT OF PARALLEL DIFFERENT SPINS(2007)