Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere

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Abstract

Ultrathin black phosphorus is a two-dimensional semiconductor with a sizeable band gap. Its excellent electronic properties make it attractive for applications in transistor, logic and optoelectronic devices. However, it is also the first widely investigated two-dimensional material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical properties and enable applications of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics. Ultrathin black phosphorus is a two-dimensional semiconductor with a finite band gap, unlike graphene, but it is known to degrade upon exposure to air. Here, the authors show that passivating few-layer samples of this material in an inert gas environment greatly improves the n-type charge transport.

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