Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

Citations Over TimeTop 1% of 2015 papers

Abstract

The formation of semiconductor heterojunctions and their high-density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional crystalline semiconductors as building blocks in next-generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate an approach for the formation of lithographically patterned arrays of lateral semiconducting heterojunctions within a single two-dimensional crystal. Electron beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser vaporization of sulfur to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are studied by Raman and photoluminescence spectroscopy, atomically resolved scanning transmission electron microscopy and device characterization. This demonstration of lateral heterojunction arrays within a monolayer crystal is an essential step for the integration of two-dimensional semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin devices.

Related Papers

• → La2MgTiO6:Bi3+/Mn4+ photoluminescence materials: Molten salt preparation, Bi3+ → Mn4+ energy transfer and thermostability(2020)21 cited
• → Photoluminescence of porous Si, oxidized then deoxidized chemically(1992)109 cited
• → Stabilization of Langmuir monolayer of hydrophobic thiocholesterol molecules(2008)8 cited
• → Study of delocalized and localized states in ZnSeO layers with photoluminescence, micro-photoluminescence, and time-resolved photoluminescence(2019)7 cited
• → Ballistic effect and new concept of Si wire photoluminescence(2003)1 cited